武汉理工大学王涛课题组
The Tao Wang Research Group
Field-Effect Transistors

A field-effect transistor (FET) device has source, drain, and gate terminals that correspond to the emitter, collector, and base. FETs control the flow of electrons from the source todrain by applying different voltage across the gate and source. We aim at the fabrication of organic FETs with high charge mobility from different organic/inorganic semiconductors, as well as evaluating charge-carrier mobility of OPV electron donors.


(Device properties of bottom-gate OFET made of an anthracene-based donor-acceptor conjugated polymer PPAT2BT8.)